Speaker: Dr. Xin-Lan Wang (王新兰), Beijing Computational Science Research Center
Abstract: Chemical modification of silicon surface has been an active field in surface chemistry study because of its potential applications in integrated circuits and semiconductor device manufacture. In order to satisfy the neeed for microelectronic industry evolution, various chemical modification techniques, which makes silicon material possess more excellent properties, such as light, electricity, mechanics and so on, have been achieved after numerous studies. However, during the course of exploration for endowing silicon material with extra functions, industrial production processes are usually what people first master, and little is known about the corresponding intermediate processes and reaction mechanisms, which may be helpful in designing and developing new silicon materials. In this paper, based on our density functional cluster model calculations, we report the dissociative adsorption mechanisms of NH3, PH3, H2O, and H2S on the Si(111)-7x7 surface, whereas these four simple molecules are the very common gas resources that are used to modify silicon.
Date&Time: April 25, 2014 (Friday), 14:30–15:30
Location: 606 Conference Room
