Speaker: Dr. Li-Ping Yang, Beijing Computational Science Research Center

Abstract: We study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of Si29 (p_Si = 4.7%) is about 4 times larger than that of C13 (p_C = 1.1%), the electron spin coherence time of defect centers in SiC nuclear spin bath in strong magnetic field (B > 300 Gauss) is longer than that of nitrogen-vacancy (NV) centers in C13 nuclear spin bath in diamond. The reason for this counter-intuitive result is the suppression of heteronuclear-spin flip-flop process in finite magnetic field. Our results show that electron spin of defect centers in SiC are excellent candidates for solid state spin qubit in quantum information processing.

Date&Time: November 14, 2014 (Friday), 14:30–15:30
Location: 606 Conference Room